Physical Models
A range of physical models are available to be used in the simulation. The physical models implemented in the simulator are fully configurable. To edit or view the physical models properties:
- From the main menu, select Model -> Model Selection.
Parameters
General
| Name | Description | Unit |
|---|---|---|
Refmat | Reference Material. The baseline material used to define reference energy levels in simulations. | - |
Temp | Temperature. Ambient temperature for the simulation | Kelvin |
Mobility
Low Field Mobility
Users can set low field mobility as constant, lattice, impurity, or carrier-carrier:
- Constant Model: Mobility is fixed to the value specified in the properties command.
- Lattice Model: Accounts for mobility reduction due to increased lattice collisions at higher temperatures.
- Impurity Model: Considers mobility reduction due to additional collisions caused by impurities.
- Carrier-Carrier Model: Similar to the impurity model but also accounts for carrier concentration effects, which are crucial at high injection levels.
Note: If the high-field model is selected, the low-field mobility model will feed into it. Otherwise, the selected mobility model will be used in the simulation.
| Name | Description | Unit |
|---|---|---|
Const_Mob | Reference Material. The baseline material used to define reference energy levels in simulations. | - |
Temp | Temperature. Ambient temperature for the simulation. | Kelvin |
High Field Mobility
Users can set high field mobility as none, e_field or j_field. The e_field or j_field models are used to select the high-field mobility model, which can be based on either the electric field magnitude or the magnitude of the field in the direction of the current.
High Field Calculation
Users can set as edge or element. Used to determine how the high field mobility field is calculated. This will either use the values along an element edge or calculate the field based on the whole element.
Surface Mobility
Users can set as yes or no. Used to select surface mobility along oxide semiconductor interfaces. This model only affects those edges that actually lie along the interface.
| Name | Description | Unit |
|---|---|---|
Surf_Mob | Used to select surface mobility along oxide semiconductor interfaces. Options: [On, Off] | - |
Recombination
SRH (Shockley Read Hall)
| Name | Description | Unit |
|---|---|---|
SRH_rec | Selects the Shockley Read Hall recombination model. Options: [On, Off] | - |
Auger
| Name | Description | Unit |
|---|---|---|
Auger_rec | Selects the Auger recombination model. Options: [On, Off] | - |
Direct
| Name | Description | Unit |
|---|---|---|
Dir_rec | Selects the direct band-to-band recombination model. Options: [On, Off] | - |
Impact Ionisation
Users can set this option to Off, Edge, or Element, but only one can be selected at a time.
| Name | Description | Unit |
|---|---|---|
II_elem | Selects the impact-ionisation model using full elemental discretisation. Options: [On, Off] | - |
II_edge | Selects the impact-ionisation model based on edge discretisation. Options: [On, Off] | - |