Material Properties

Aquarius includes a library of commonly used semiconductor and non-semiconductor materials. All materials are fully customisable and can be edited by the user. Additionally, users can save and load their own parameter files for individual materials and the full material library.

To edit or view the material properties:

1. From the main menu, select Model -> Material Library.

2. In the materials library, users can edit, delete, import, and export individual materials as Material Properties (.mat) files or manage the entire library as Material Library (.mlb) files. Users can modify the properties of each material or define entirely new materials.

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When defining new materials, the solver will only recognise user-defined materials with specific reserved names. These names are: user1, user2, user3, user4, and user5. Any custom material must use one of these names to be accepted by the solver.

1. Parameters

1.1. General

Name	Description	Unit
SEMCN	Semiconductor material. (1 = Yes, -1 = No).	-
FIXSC	Fixed semiconductor. (1 = Single composition, -1 = Variable).	-
EPSLR	Relative dielectric constant.	-
EG	Band gap.	eV
AFFIN	Electron affinity.	eV
MASS_P	Relative hole effective mass.	-
MASS_N	Relative electron effective mass.	-
LAT_CONST	Lattice constant.	Å

1.2. Mobility

Name	Description	Unit
MU_0_P	Constant mobility (holes).	cm²/Vs
MU_0_N	Constant mobility (electrons).	cm²/Vs
MU_ALPT_P	Temperature coefficient for lattice scattering mobility (holes).	-
MU_ALPT_N	Temperature coefficient for lattice scattering mobility (electrons).	-
MU_MAX_P	Maximum mobility (holes), decreases with increasing lattice temperature.	cm²/Vs
MU_MAX_N	Maximum mobility (electrons), decreases with increasing lattice temperature.	cm²/Vs
MU_MIN_P	Minimum mobility (holes), used in impurity and carrier scattering mobility.	cm²/Vs
MU_MIN_N	Minimum mobility (electrons), used in impurity and carrier scattering mobility.	cm²/Vs
MU_NREF_P	Reference doping for impurity and carrier scattering mobility (holes).	cm⁻³
MU_NREF_N	Reference doping for impurity and carrier scattering mobility (electrons).	cm⁻³
MU_ALPD_P	Coefficient for impurity and carrier scattering mobility (holes).	-
MU_ALPD_N	Coefficient for impurity and carrier scattering mobility (electrons).	-
MU_VSAT_P	Carrier saturation velocity at 300K (holes).	cm/s
MU_VSAT_N	Carrier saturation velocity at 300K (electrons).	cm/s
MU_BETA_P	Coefficient for field-dependent mobility (holes).	-
MU_BETA_N	Coefficient for field-dependent mobility (electrons).	-
MU_GSUR_P	Oxide interface mobility reduction factor (holes).	-
MU_GSUR_N	Oxide interface mobility reduction factor (electrons).	-
MU_S_EC_P	Critical electric field for oxide interface mobility model (holes).	V/cm
MU_S_EC_N	Critical electric field for oxide interface mobility model (electrons).	V/cm
MU_LOMB_B_P	Base acoustic-scattering coefficient (for holes).	cm/s
MU_LOMB_C_P	Doping-dependent acoustic-scattering coefficient (for holes).	K·cm·s·(V/cm)−2/3
MU_LOMB_ALPHA_P	Doping-dependence exponent (for holes).	cm⁻³
MU_LOMB_BETA_P	Field-dependence exponent for first term (for holes).	–
MU_LOMB_GAMMA_P	Field-dependence exponent for second term (for holes).	V/cm
MU_LOMB_B_N	Base acoustic-scattering coefficient (for electrons).	cm/s
MU_LOMB_C_N	Doping-dependent acoustic-scattering coefficient (for electrons).	K·cm·s·(V/cm)−2/3
MU_LOMB_ALPHA_N	Doping-dependence exponent (for electrons).	cm⁻³
MU_LOMB_BETA_N	Field-dependence exponent for first term (for electrons).	–
MU_LOMB_GAMMA_N	Field-dependence exponent for second term (for electrons).	V/cm

1.3. Recombination Properties

Name	Description	Unit
E_TRAP	Trap energy relative to the intrinsic Fermi-level.	eV
SRH_TAU_P	Minority carrier lifetimes.	s
SRH_AP	Coefficients used in doping dependent lifetime models.	-
SRH_BP	Coefficients used in doping dependent lifetime models.	-
SRH_CP	Coefficients used in doping dependent lifetime models.	-
SRH_DP	Coefficients used in doping dependent lifetime models.	-
SRH_NREFP	Reference doping concentrations for lifetime models.	cm⁻³
SRH_TAU_N	Minority carrier lifetimes.	s
SRH_AN	Coefficients used in doping dependent lifetime models.	-
SRH_BN	Coefficients used in doping dependent lifetime models.	-
SRH_CN	Coefficients used in doping dependent lifetime models.	-
SRH_DN	Coefficients used in doping dependent lifetime models.	-
SRH_NREFN	Reference doping concentrations for lifetime models.	cm⁻³
AUGER_CP	Auger coefficient for holes.	cm⁶ s⁻¹
AUGER_CN	Auger coefficient for electrons.	cm⁶ s⁻¹
DIRECT_C	Direct recombination coefficient.	cm³ s⁻¹
AV_ALPH_P	Avalanche prefactor coefficients.	cm⁻¹
AV_BETA_P	Avalanche exponential coefficients.	V/cm
AV_ALPH_N	Avalanche prefactor coefficients.	cm⁻¹
AV_BETA_N	Avalanche exponential coefficients.	V/cm
OC_A_P	Pre-exponential factor (for holes).	cm⁻¹
OC_B_P	Field scaling parameter (for holes).	V/cm
OC_C_P	Temperature coefficient (prefactor) (for holes).	1/K
OC_D_P	Temperature coefficient (field scaling) (for holes).	1/K
OC_M_P	Exponent in exponential term (for holes).	–
OC_N_P	Field-power exponent (for holes).	–
OC_A_N	Pre-exponential factor (for electrons).	cm⁻¹
OC_B_N	Field scaling parameter (for electrons).	V/cm
OC_C_N	Temperature coefficient (prefactor) (for electrons).	1/K
OC_D_N	Temperature coefficient (field scaling) (for electrons).	1/K
OC_M_N	Exponent in exponential term (for electrons).	–
OC_N_N	Field-power exponent (for electrons).	–

1.4. Optical Properties

Name	Description	Unit
ABSCOEFF	Optical absorption coefficient.	cm⁻¹

1.5. Thermal Properties

Name	Description	Unit
THER_COND	Thermal conductivity.	-
HEAT_CAPA	Thermal heat capacity.	-
THER_COEF	Coefficient for thermal conductivity.	-
VS_COEFTP	Coefficients for temperature dependent saturation velocity.	-
VS_COEFTN	Coefficients for temperature dependent saturation velocity.	-