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Material Properties

Aquarius includes a library of commonly used semiconductor and non-semiconductor materials. All materials are fully customisable and can be edited by the user. Additionally, users can save and load their own parameter files for individual materials and the full material library.

To edit or view the material properties:

  1. From the main menu, select Model -> Material Library.

  1. In the materials library, users can edit, delete, import, and export individual materials as Material Properties (.mat) files or manage the entire library as Material Library (.mlb) files. Users can modify the properties of each material or define entirely new materials.

Parameters

General

NameDescriptionUnit
SemcnSemiconductor material. (1 = Yes, -1 = No)-
FixscFixed semiconductor. (1 = Single composition, -1 = Variable)-
EpslrRelative dielectric constant.-
EgBand gap.eV
AffinElectron affinity.eV
Mass_pRelative hole effective mass.-
Mass_nRelative electron effective mass.-
Lat_constLattice constant.Angstroms

Mobility

NameDescriptionUnit
Mu_0_pConstant mobility (holes).cm²/Vs
Mu_0_nConstant mobility (electrons).cm²/Vs
Mu_AlpT_pTemperature coefficient for lattice scattering mobility (holes).-
Mu_AlpT_nTemperature coefficient for lattice scattering mobility (electrons).-
Mu_max_pMaximum mobility (holes), decreases with increasing lattice temperature.cm²/Vs
Mu_max_nMaximum mobility (electrons), decreases with increasing lattice temperature.cm²/Vs
Mu_min_pMinimum mobility (holes), used in impurity and carrier scattering mobility.cm²/Vs
Mu_min_nMinimum mobility (electrons), used in impurity and carrier scattering mobility.cm²/Vs
Mu_nref_pReference doping for impurity and carrier scattering mobility (holes).cm⁻³
Mu_nref_nReference doping for impurity and carrier scattering mobility (electrons).cm⁻³
Mu_alpD_pCoefficient for impurity and carrier scattering mobility (holes).-
Mu_alpD_nCoefficient for impurity and carrier scattering mobility (electrons).-
Mu_vsat_pCarrier saturation velocity at 300K (holes).cm/s
Mu_vsat_nCarrier saturation velocity at 300K (electrons).cm/s
Mu_beta_pCoefficient for field-dependent mobility (holes).-
Mu_beta_nCoefficient for field-dependent mobility (electrons).-
Mu_gsur_pOxide interface mobility reduction factor (holes).-
Mu_gsur_nOxide interface mobility reduction factor (electrons).-
Mu_S_Ec_pCritical electric field for oxide interface mobility model (holes).V/cm
Mu_S_Ec_nCritical electric field for oxide interface mobility model (electrons).V/cm
E_trapTrap energy relative to the intrinsic Fermi-level.eV

Recombination Properties

NameDescriptionUnit
SRH_TAU_pMinority carrier lifetimes.secs
SRH_ApCoefficients used in doping dependent lifetime models.-
SRH_BpCoefficients used in doping dependent lifetime models.-
SRH_CpCoefficients used in doping dependent lifetime models.-
SRH_DpCoefficients used in doping dependent lifetime models.-
SRH_NrefpReference doping concentrations for lifetime models.cm⁻³
SRH_TAU_nMinority carrier lifetimes.secs
SRH_AnCoefficients used in doping dependent lifetime models.-
SRH_BnCoefficients used in doping dependent lifetime models.-
SRH_CnCoefficients used in doping dependent lifetime models.-
SRH_DnCoefficients used in doping dependent lifetime models.-
SRH_NrefnReference doping concentrations for lifetime models.cm⁻³
Auger_CpAuger coefficients.cm⁶ s⁻¹
Auger_CnAuger coefficients.cm⁶ s⁻¹
Direct_CDirect recombination coefficient.cm³ s⁻¹
Av_alph_pAvalanche prefactor coefficients.cm⁻¹
Av_beta_pAvalanche exponential coefficients.V/cm
Av_alph_nAvalanche prefactor coefficients.cm⁻¹
Av_beta_nAvalanche exponential coefficients.V/cm

Optical Properties

NameDescriptionUnit
AbscoeffOptical absorption coefficient.cm⁻¹

Thermal Properties

NameDescriptionUnit
Ther_condThermal conductivity-
Heat_CapaThermal heat capacity-
Ther_coefCoefficient for thermal conductivity-
Vs_coefTpCoefficients for temperature dependent saturation velocity-
Vs_coefTnCoefficients for temperature dependent saturation velocity-