Internal Plots
1. Overview
Internal quantities represent the physical fields and material properties that Aquarius computes during a device simulation. These values originate directly from the numerical solution of the semiconductor equations or are derived from those solved quantities.
They provide detailed insight into the internal behaviour of the device, enabling visualisation of charge distribution, band structure, transport phenomena, thermal effects, and more. Internal quantities form the foundation of most device‑level analysis, helping identify regions such as depletion zones, high‑field areas, conduction paths, hot spots, and junction transitions.
Internal quantities can be visualised using either of the following plot types:
- Contour Plot, for viewing spatial distributions across a region.
- Cut Line Plot, for examining values along a specific line through the device.
2. Quantities Available for Visualisation
Below is a complete list of the internal quantities that can be plotted within Aquarius.
| Name | Description | Units |
|---|---|---|
| Acceptor Concentration | Density of ionised acceptor dopants. | cm-3 |
| Conduction Band Energy | Energy level of the conduction band edge. | eV |
| Conduction Band Offset | Discontinuity in conduction band energy between material regions. | eV |
| Donor Concentration | Density of ionised donor dopants. | cm-3 |
| Electric Field – X Comp | X‑component of the electric field. | V/cm |
| Electric Field – Y Comp | Y‑component of the electric field. | V/cm |
| Electric Field – Mag | Magnitude of the electric field vector. | V/cm |
| Electron Concentration | Free electron density. | cm-3 |
| Electron Current Density – X Comp | X‑component of electron current density. | A/cm2 |
| Electron Current Density – Y Comp | Y‑component of electron current density. | A/cm2 |
| Electron Current Density – Mag | Magnitude of electron current density vector. | A/cm2 |
| Electron Fermi Energy | Fermi level for electrons. | eV |
| Electron Lifetime | Electron recombination lifetime. | s |
| Electron Mobility | Mobility of electrons. | cm2/V·s |
| Electron Quasi‑Fermi Potential | Quasi‑Fermi level for electrons (electrochemical potential). | V |
| Electron Temperature | Electron temperature under non‑equilibrium conditions. | K |
| Energy Band Diagram | Combined plot showing: Conduction Band, Valence Band, Intrinsic Energy, Hole Fermi Energy, Electron Fermi Energy. | – |
| Electrostatic Potential | Electric potential (voltage) relative to circuit ground. | V |
| Hole Concentration | Free hole density. | cm-3 |
| Hole Current Density – X Comp | X‑component of hole current density. | A/cm2 |
| Hole Current Density – Y Comp | Y‑component of hole current density. | A/cm2 |
| Hole Current Density – Mag | Magnitude of hole current density vector. | A/cm2 |
| Hole Fermi Energy | Fermi level for holes. | eV |
| Hole Lifetime | Hole recombination lifetime. | s |
| Hole Mobility | Mobility of holes. | cm2/V·s |
| Hole Quasi‑Fermi Potential | Quasi‑Fermi level for holes (electrochemical potential). | V |
| Intrinsic Carrier Concentration | Thermal equilibrium carrier density (material property). | cm-3 |
| Intrinsic Energy Level | Intrinsic Fermi level (mid-gap reference). | eV |
| Joule Heating (J·E) | Local power density generated by current flow. | W/cm3 |
| Lattice Temperature | Local lattice temperature. | K |
| Net Charge (Nd – Na + p – n) | Net charge density from dopants and carriers. | cm-3 |
| Net Doping (Na – Nd) | Net doping concentration obtained from acceptors minus donors. | cm-3 |
| Recombination Rate | Rate at which electrons and holes recombine. | 1/cm3·s |
| Total Current Density – X Comp | X‑component of total current density (holes + electrons). | A/cm2 |
| Total Current Density – Y Comp | Y‑component of total current density. | A/cm2 |
| Total Current Density – Mag | Magnitude of total current density vector. | A/cm2 |
| Valence Band Energy | Energy level of the valence band edge. | eV |
| Valence Band Offset | Discontinuity in valence band energy between material regions. | eV |