Zener Diode

1. Overview

This component provides a Zener diode. The behaviour is identical to an ideal diode except when the reverse bias voltage ($-V_D$) is greater than the breakdown voltage ($V_b$).

1.1. Ideal Case

When $V_D ≥ -V_b$ the diode obeys the Shockley diode equation:

$$I_D = I_S (e^{V_D/nV_T} - 1)$$

where:

• $I_D$ is the diode current,
• $I_S$ is the reverse-bias saturation current and
• $V_D$ is the voltage across the diode.
• $V_T$ is the thermal voltage (defined by $kT/q$).
• $n$ is the ideality factor.

1.2. Breakdown Case

When $V_D < -V_b$ current is given by:

$$I_D = I_S (e^{V_D/nV_T} - 1) + (V_D+V_b)/R$$

where:

• $R$ is the breakdown resistance.

2. Parameters

Name	Description	Unit
Name	A unique identifier for the component.	-
Saturation Current	($I_S$) Reverse-bias saturation current	Amperes (A)
Idealty Factor	($n$)	-
Breakdown Voltage	(V_b) Reverse bias where the diode breaks down	Volts (V)
Breakdown Resistance	(R) Fixed resistance in reverse bias beyond the breakdown voltage	Ohms (Ω)
Forward Bias Resistance	The fixed resistance value in forward bias	Ohms (Ω)

3. Usage Instructions

tip

For instructions on adding a component to the simulation circuit, click here.